ROMJIST Volume 23, No. 2, 2020, pp. 127-139
Cristian RAVARIU, Dan E. MIHAIESCU, Alina MOROSAN, Vlad PLACINTA New steps for advancing the Nothing On Insulator Triode 3nm gap and preliminary expanded technology
ABSTRACT: This paper presents new steps of the Nothing On Insulator (NOI) device advancing. From the simulations point of view, a better swing is accomplished by shorter vacuum gap and the transistor replacement by triode. The actual simulated NOI-Triode with 3nm gap possesses lower swing versus the previous NOI-Triode of 14nm gap. Functional simulations prove the current density vectors from Source to Drain with substantial Gate leakage current. Comparisons with similar vacuum nanotransistors of other authors reveal similar ID-VDS and ID-VGS curves, with superior currents for the actual NOI-Triode 3nm gap. A preliminary technology, based on laser ablation by MALDI technique, produced a gap of 10m in ABS-conductor micro-wires deposited on glass substrate. An accurate NOI architecture was accomplished, but at expanded sizes, defined by the laser spot resolution. KEYWORDS: Microelectronics, Electronic Packaging, Nanotechnology, SimulationsRead full text (pdf)