S. SIMEONOV, S. BAKALOVA, E. KAFEDJIISKA, A. SZEKERES, S. GRIGORESCU, F. SIMA, G. SOCOL, I. N. MIHAILESCU
Al/AlN/Si MIS Structures with Pulsed-Laser-Deposited AlN Films as Gate Dielectrics: Electrical Properties

Abstract. MIS capacitors with AlN films deposited on p-Si substrates by pulsed laser deposition (PLD) have been prepared and the type, energy position and concentration of electrically active defects in the AlN films have been studied. The presence of deep levels has been detected by capacitance-voltage and conductance-voltage measurements performed at different frequencies and temperatures of 77 and 300 K respectively. The concentration of the traps, responsible for the leakage currents, and the conduction mechanism have been determined from the analysis of the current-voltage characteristics at the different temperature regimes. It has been shown that inter-trap tunneling could adequately account for the observed tunneling currents in these MIS structures.

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