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F. GIACOMOZZI, C. CALAZA, S. COLPO, V. MULLONI, A. COLLINI, B. MARGESIN,
P. FARINELLI, F. CASINI, R. MARCELLI, G. MANNOCCHI, L. VIETZORRECK
Development of High Con Coff Ratio RF Mems Shunt
Switches
Abstract. This paper reports on the successive improvements introduced in
the shunt switches fabricated with the RF MEMS multiuser technology platform
available at FBK. In the course of a multiyear development several technological
features and design methods have been made available to enhance the operation of
capacitive switches. This work analyzes their effects by reviewing the behaviour
of the FBK capacitive switches at three different stages of this optimization
process. Improvements have been assessed by means of DC electromechanical
characterizations, which use a simple quasistatic C-V measurement to extract the
switch actuation voltage and the capacitance in the on and off states (Con and Coff) and RF measurements. The addition of a floating metal layer into the
process flow has allowed a great increase of the switch on state capacitances,
getting Con/Coff ratios of 200, up to 50 times greater than the ones obtained
for the same structures without this feature.
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