Abstract.
The analytical models of the electric field and potential distributions are useful for a lot of SOI devices, like SOI-MOSFET, SOI-BJT, pseudo-MOS transistors, SOI sensors and the others. One of the main interest is to establish the inversion or accumulation conditions at front or back interfaces.
The paper refers to a one-dimensional analysis, both for partially and fully depleted devices. The goal of this paper is to obtain the inversion conditions at the front interfaces in MOS/SOI capacitors with uniform and gaussian profile of the impurities in the silicon film. The study of the inversion onset at the interface Buried-Oxide/Substrate is investigated too.
The results are useful because they give an efficient method for threshold voltage deducing in many situations. They also represent a reference point in developing news models for SOI-devices manufactured on the films uniform or non-uniform doping. The results were compared with PISCES numerical simulations and were in a good agreement.