Ultrasound Treatment as a New Way for Defect Engineering

ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY
Volume 2, Number 1-2, 1999, 173 - 187

Ultrasound Treatment as a New Way for Defect Engineering
in Semiconductor Materials and Devices

Moisey K. SHEINKMAN, Nadezhda E. KORSUNSKAYA
Institute of Semiconductor Physics, Kyiv, Ukraine
E-mail: moishe@photel.semicond.kiev.ua

Sergey. S. OSTAPENKO
University of South Florida Tampa, USA
E-mail ostapenk@eng.usf.edu

Abstract.
UltraSound Treatment, UST, of semiconductors in many cases results in a stable improvement of material properties and device parameters and thus can be used in a defect engineering. The physical backgrounds of such effects as well as UST methods and apparatus are described.