Abstract.
A novel type of thresholding element for optoelectronic neurons is presented theoretically. This element is based on the MOS transistor with photoelectret controlled gate. Its inputs are optical while the output is an electric current (drain current). The device structure is described and estimations of its parameters are presented, as well as its most important features. The device considered proves to be a very promising candidate when used as a thresholding element in optoelectronic neurons.