ROMJIST Volume 22, No. 1, 2019, pp. 57-68
Cristian Ravariu, Elena Manea, Catalin Parvulescu, Florin Babarada, Alina Popescu, Dan E. Mihaiescu, Daniela Istrati Technological aspects and simulation results for the Nothing On Insulator device developed into a planar technology
ABSTRACT: This paper presents the simulations results of a planar variant of Nothing On Insulator device starting from Si-surface preparation till the fine oxide configuration of few nanometers. A dry oxidation at lower temperature is a better process to a higher temperature in a time under 1min. But the final experimental technological tests find the best solution - relatively high temperature, acceptable time of 5-8 min, but dilution of the O2 fluids in the furnace adding N2 in a suitable ratio. The functionality of the planar variant p-NOI was tested by Atlas simulations in two cases: (i) a p-NOI structure with 10nm SiO2 when it is compared to a standard simulated MOSFET from Atlas and (ii) a p-NOI structure with SiO2/HfO2 stack when it is compared with an insulator stack with similar composition of one of the lasts generation fabricated MOSFET. The conduction mechanism obeys to the Fowler-Nordheim's law. The current flow from source to drain occurs in absence of an inversion channel. A similar investigated device by other authors is a fabricated MIM (Metal-Insulator-Metal) structure, which is compared with the actual p-NOI simulation. The simulations fit over the experimental picked points from different resources.KEYWORDS: Tunneling device, nanoelectronics, simulations, technological stepsRead full text (pdf)