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Andrei SEVCENCO, Gheorghe BREZEANU
A Compact Analytical Modelling of the Electrical Characteristics
of Submicron Channel MOSFETs
Abstract. An accurate analytical model for the electrical characteristics
of submicron MOS transistors is presented. Original parameters are proposed for
the description of the velocity saturation effect. New equations for the
electrical transfer characteristics and transconductance are obtained. A theory
- experiment comparison is used in order to prove the accuracy of the model. A
very good agreement between the transfer characteristics and transconductance
measured on the short channel pMOS and the calculated curves based on the model,
for different transistor geometries.
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