ROMJIST Volume 20, No. 4, 2017, pp. 369-384
Viorel Banu, Maxime Berthou, Josep Montserrat, Xavier Jordà, Philippe Godignon Surge Current Robustness Improvement of SiC Junction Barrier Schottky Diodes by Layout Design
ABSTRACT: A surge current robustness improvement based on experimental surge current evaluation is proposed for various layout designs of 1.2kV silicon carbide junction barrier Schottky diodes. The silicon carbide devices working at temperatures significantly higher than silicon power devices need specific reliability tests, adapted to high temperature operation and/or high power density specific for this new generation of power devices. Theoretical prediction of surge current capability by computer simulation is not possible because of 3-D effects occurring at high current density. The only available method for surge current characterization is the experimental destructive test. The self-heating effects, the bipolar activation characteristic during the applied power and the temperature developed inside the diode’s body during the power pulse are observable on the I-V characteristic by the use of 10ms sinusoidal power current pulses.KEYWORDS: Surge current, SiC (silicon carbide), layout, diode, Schottky diode, JBS diode (junction barrier Schottky diode)Read full text (pdf)