Romanian Journal of Information Science and Technology (ROMJIST)

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ROMJIST is a publication of Romanian Academy,
Section for Information Science and Technology

Editor – in – Chief:
Academician Dan Dascalu

Secretariate (office):
Adriana Neagu
Adress for correspondence: romjist@nano-link.net (after 1st of January, 2019)

Editing of the printed version: Mihaela Marian (Publishing House of the Romanian Academy, Bucharest)

Technical editor
of the on-line version:
Lucian Milea (University POLITEHNICA of Bucharest)

Sponsors:
• National Institute for R & D
in Microtechnologies
(IMT Bucharest), www.imt.ro
• Association for Generic
and Industrial Technologies (ASTEGI), www.astegi.ro

ROMJIST Volume 23, No. 2, 2020, pp. 127-139, Paper no. 643/2020
 

Cristian RAVARIU, Dan E. MIHAIESCU, Alina MOROSAN, Vlad PLACINTA
New steps for advancing the Nothing On Insulator Triode 3nm gap and preliminary expanded technology

ABSTRACT: This paper presents new steps of the Nothing On Insulator (NOI) device advancing. From the simulations point of view, a better swing is accomplished by shorter vacuum gap and the transistor replacement by triode. The actual simulated NOI-Triode with 3nm gap possesses lower swing versus the previous NOI-Triode of 14nm gap. Functional simulations prove the current density vectors from Source to Drain with substantial Gate leakage current. Comparisons with similar vacuum nanotransistors of other authors reveal similar ID-VDS and ID-VGS curves, with superior currents for the actual NOI-Triode 3nm gap. A preliminary technology, based on laser ablation by MALDI technique, produced a gap of 10m in ABS-conductor micro-wires deposited on glass substrate. An accurate NOI architecture was accomplished, but at expanded sizes, defined by the laser spot resolution.

KEYWORDS: Microelectronics, Electronic Packaging, Nanotechnology, Simulations

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