ROMJIST Volume 28, No. 2, 2025, pp. 138-149, DOI: 10.59277/ROMJIST.2025.2.02
Nikolay BONEV, Dirk Michael NUERNBERGK, Christian LANG Inclusion of Mechanical Stress Effects in a Compact MOSFET Model
ABSTRACT: The analog performance of integrated circuits relies on stable parameters of its transistors. Mechanical stress changes the electronic properties of silicon and therefore, also the device parameters. For circuit design a good model of these effects is needed for a predictable and reliable function of the circuits. This article extracts the changes of various MOSFET parameters under effect of mechanical stress. A compact description of the stress effects is derived by applying tensors of piezo coefficients. The deviations are included in the physically based compact EKV model. A comparison with measured data shows that the stress effects are modelled correctly within a 10 % error margin.KEYWORDS: EKV model; electron mobility; mechanical stress; MOSFET; parameter extraction; stress tensor; threshold voltage.Read full text (pdf)